SSF2122E 20v dual n-channel mosfet www.goodark.com page 1 of 8 rev.1.0 main product characteristics v dss 20v r ds (on) 15.2mohm(typ.) i d 7a features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v(silicon limited) 7 i d @ tc = 100c continuous drain current, v gs @ 10v 5 i dm pulsed drain current 42 a p d @tc = 25c power dissipation 1.4 w v ds drain-source voltage 20 v v gs gate-to-source voltage 12 v t j t stg operating junction and storage temperature range -55 to + 150 c marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. dfn 3x3-8l
SSF2122E 20v dual n-channel mosfet www.goodark.com page 2 of 8 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 v v gs = 0v, i d = 250a 15.2 23 v gs =4.5v,i d = 4a 15.9 24 v gs =4v,i d =4a 17.6 30 v gs =3.1v,i d =4a r ds(on) static drain-to-source on-resistance 20.8 35 m v gs =2.5v,i d =2a 0.5 1 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 0.30 v t j = 125 i dss drain-to-source leakage current 1 a v ds = 20v,v gs = 0v 10 v gs =8v i gss gate-to-source forward leakage -10 a v gs = -8v q g total gate charge 24.1 q gs gate-to-source charge 1.4 q gd gate-to-drain("miller") charge 4.2 nc i d = 7a, v ds =10v, v gs = 10v t d(on) turn-on delay time 5.3 t r rise time 18.2 t d(off) turn-off delay time 25 t f fall time 3 ns v gs =4v, v ds =10v, r l =2.86,i d = 3.5a c iss input capacitance 681 c oss output capacitance 124 c rss reverse transfer capacitance 117 pf v gs = 0v, v ds =10v, ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 7 a i sm pulsed source current (body diode) 42 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.7 1.2 v i s =1.5a, v gs =0v t rr reverse recovery time 34.3 ns q rr reverse recovery charge 10.2 nc t j = 25c, i f =7a, di/dt = 100a/s
SSF2122E 20v dual n-channel mosfet www.goodark.com page 3 of 8 rev.1.0 test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max junction temperature. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c.
SSF2122E 20v dual n-channel mosfet www.goodark.com page 4 of 8 rev.1.0 typical electrical and thermal characteristics figure 2. typical transfer characteristics figure 1: typical output characteristics figure 3. gate to source cut-off oltage figure 4: drain-to-source breakdown voltage vs. temperature
SSF2122E 20v dual n-channel mosfet www.goodark.com page 5 of 8 rev.1.0 figure 5. normalized on-resistance vs. case temperature typical electrical and thermal characteristics figure 6. normalized on-resistance vs. gate to source voltage figure 7. typical capacitance vs. drain-to-source voltage figure 8. gate-charge characteristics
SSF2122E 20v dual n-channel mosfet www.goodark.com page 6 of 8 rev.1.0 typical electrical and thermal characteristics figure9. maximum drain current vs. case temperature figure10. forward current vs. diode forward voltage figure11. power dissipation vs. case temperature
SSF2122E 20v dual n-channel mosfet www.goodark.com page 7 of 8 rev.1.0 mechanical data dfn33-8l package outline dimension: min nom max min nom max a 0 .700 0 .80 0.900 0 .0276 0 .0315 0 .0354 a1 0 .00 - -- 0 .05 0 .000 - -- 0 .002 b 0 .24 0 .30 0 .35 0 .009 0 .012 0 .014 c 0 .08 0 .152 0 .25 0 .003 0 .006 0 .010 d e e1 e l 0 .20 0 .375 0 .450 0 .008 0 .0148 0 .0177 l1 0 - -- 0 .100 0 - -- 0 .004 1 0 10 12 0 10 12 dim. 2 .90 bsc 0. 114 bsc 2.80 bsc 2.30 bsc 0.65 bsc 0.110 bsc 0.091 bsc 0.026 bsc millimeters inches
SSF2122E 20v dual n-channel mosfet www.goodark.com page 8 of 8 rev.1.0 ordering and marking information device marking: 2122e package (available) dfn 3x3-8l operating temperature range c : -55 to 150 oc devices per unit package type units/ tape tapes/ inner box units/ inner box inner boxes/ carton box units/ carton box dfn 3x3-8l 3000pcs 4pcs 12000pcs 4pcs 48000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj=125 to 150 @ 80% of max v dss /v ces /v r 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) tj=150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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